DDR3

DDR3 Unbuffered DIMMs (低电压)

具备低电压(1.35V)特性，符合JEDEC的U-DIMM及SO-DIMM内存模块，相较于标准DDR3内存的1.5伏特，耗电更低仅1.35伏特，可有效为企业达到节能减碳的目标。


订购资讯

创见型号
RAM
内存类型
速度
Type
详情
TS1GSK64W8H
DDR3
Unbuffered SO-DIMM
1866
低电压
8GB
1.35V
(512Mx8)x16
TS256MSK64W8N
DDR3
Unbuffered SO-DIMM
1866
低电压
2GB
1.35V
(256Mx8)x8
TS256MSK64W8U
DDR3
Unbuffered SO-DIMM
1866
低电压
2GB
1.35V
(128Mx8)x16
TS512MSK64W8H
DDR3
Unbuffered SO-DIMM
1866
低电压
4GB
1.35V
(512Mx8)x8
TS128MLK64W6U
DDR3
Unbuffered Long-DIMM
1600
低电压
1GB
1.35V
(128Mx8)x8
TS1GLK64W6H
DDR3
Unbuffered Long-DIMM
1600
低电压
8GB
1.35V
(512Mx8)x16
TS256MLK64W6N
DDR3
Unbuffered Long-DIMM
1600
低电压
2GB
1.35V
(256Mx8)x8
TS256MLK64W6U
DDR3
Unbuffered Long-DIMM
1600
低电压
2GB
1.35V
(128Mx8)x16
TS512MLK64W6H
DDR3
Unbuffered Long-DIMM
1600
低电压
4GB
1.35V
(512Mx8)x8
TS512MLK64W6N
DDR3
Unbuffered Long-DIMM
1600
低电压
4GB
1.35V
(256Mx8)x16
TS1GSK64W6H
DDR3
Unbuffered SO-DIMM
1600
低电压
8GB
1.35V
(512Mx8)x16
TS256MSK64W6N
DDR3
Unbuffered SO-DIMM
1600
低电压
2GB
1.35V
(256Mx8)x8
TS256MSK64W6U
DDR3
Unbuffered SO-DIMM
1600
低电压
2GB
1.35V
(128Mx8)x16
TS256MSK64W6X
DDR3
Unbuffered SO-DIMM
1600
低电压
2GB
1.35V
(256Mx16)x4
TS512MSK64W6H
DDR3
Unbuffered SO-DIMM
1600
低电压
4GB
1.35V
(512Mx8)x8
TS512MSK64W6N
DDR3
Unbuffered SO-DIMM
1600
低电压
4GB
1.35V
(256Mx8)x16
TS128MSK64W3W
DDR3
Unbuffered SO-DIMM
1333
低电压
1GB
1.35V
(128Mx16)x4
TS256MSK64W3N
DDR3
Unbuffered SO-DIMM
1333
低电压
2GB
1.35V
(256Mx8)x8
TS512MSK64W3N
DDR3
Unbuffered SO-DIMM
1333
低电压
4GB
1.35V
(256Mx8)x16

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